STGD6M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
$1.51
Available to order
Reference Price (USD)
2,500+
$0.56440
5,000+
$0.54060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with STGD6M65DF2 Single IGBTs from STMicroelectronics, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. STMicroelectronics's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 88 W
- Switching Energy: 36µJ (on), 200µJ (off)
- Input Type: Standard
- Gate Charge: 21.2 nC
- Td (on/off) @ 25°C: 15ns/90ns
- Test Condition: 400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
Infineon Technologies
IHW30N65R5XKSA1
Rohm Semiconductor
RGW60TS65CHRC11
Microchip Technology
APT33GF120BRG
Infineon Technologies
IKD06N60RAATMA2
Infineon Technologies
AIGW50N65F5XKSA1
IXYS
IXYH30N450HV
Rohm Semiconductor
RGSX5TS65HRC11
Rohm Semiconductor
RGW40TK65GVC11
Infineon Technologies
IGW50N65F5AXKSA1
IXYS