STGF4M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
$1.29
Available to order
Reference Price (USD)
1+
$0.97000
10+
$0.87100
100+
$0.69040
500+
$0.57904
2,000+
$0.43990
6,000+
$0.42135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose STGF4M65DF2 Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGF4M65DF2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 16 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 23 W
- Switching Energy: 40µJ (on), 136µJ (off)
- Input Type: Standard
- Gate Charge: 15.2 nC
- Td (on/off) @ 25°C: 12ns/86ns
- Test Condition: 400V, 4A, 47Ohm, 15V
- Reverse Recovery Time (trr): 133 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
Related Products
Infineon Technologies
AIKW50N60CTXKSA1
Renesas Electronics America Inc
RJP60V0DPM-00#T1
Harris Corporation
HGT1S12N60C3
Sanken
FGM622S
onsemi
FGHL50T65SQDT
IXYS
IXGT6N170AHV
Rohm Semiconductor
RGTH60TS65GC11
Infineon Technologies
IGB20N60H3ATMA1
Microchip Technology
APT25GR120BD15
IXYS