STGP10M65DF2
STMicroelectronics
STMicroelectronics
IGBT 650V 10A TO-220AB
$2.27
Available to order
Reference Price (USD)
1+
$2.25000
50+
$1.90580
100+
$1.62370
500+
$1.33402
1,000+
$1.10534
2,500+
$1.02910
5,000+
$1.01640
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose STGP10M65DF2 Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGP10M65DF2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Power - Max: 115 W
- Switching Energy: 120µJ (on), 270µJ (off)
- Input Type: Standard
- Gate Charge: 28 nC
- Td (on/off) @ 25°C: 19ns/91ns
- Test Condition: 400V, 10A, 22Ohm, 15V
- Reverse Recovery Time (trr): 96 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
IXYS
IXYP50N65C3
STMicroelectronics
STGWA75M65DF2
Infineon Technologies
IRGP4072DPBF
IXYS
IXYN50N170CV1
Infineon Technologies
IGW100N60H3FKSA1
Rohm Semiconductor
RGS50TSX2DGC11
IXYS
IXYK140N90C3
Renesas Electronics America Inc
RJH65T46DPQ-A0#T0
onsemi
NGTB50N60FWG
IXYS