STGP30H60DFB
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
$3.39
Available to order
Reference Price (USD)
1+
$3.24000
50+
$2.64600
100+
$2.39850
500+
$1.90350
1,000+
$1.60650
2,500+
$1.50750
5,000+
$1.45800
Exquisite packaging
Discount
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Discover high-performance STGP30H60DFB Single IGBTs from STMicroelectronics, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, STGP30H60DFB ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 383µJ (on), 293µJ (off)
- Input Type: Standard
- Gate Charge: 149 nC
- Td (on/off) @ 25°C: 37ns/146ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 53 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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