STGYA120M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
$15.67
Available to order
Reference Price (USD)
1+
$11.98000
10+
$11.08300
100+
$9.50750
600+
$8.56250
1,200+
$7.95000
Exquisite packaging
Discount
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Choose STGYA120M65DF2 Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGYA120M65DF2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
- Power - Max: 625 W
- Switching Energy: 1.8mJ (on), 4.41mJ (off)
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 66ns/185ns
- Test Condition: 400V, 120A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 202 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Exposed Pad
- Supplier Device Package: MAX247™
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