STGYA50H120DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V,
$9.99
Available to order
Reference Price (USD)
1+
$9.99000
500+
$9.8901
1000+
$9.7902
1500+
$9.6903
2000+
$9.5904
2500+
$9.4905
Exquisite packaging
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Optimize power control with STGYA50H120DF2 Single IGBTs from STMicroelectronics, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. STMicroelectronics ensures STGYA50H120DF2 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 2mJ (on), 2.1mJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 40ns/284ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 340 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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