STGYA50M120DF3
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V,
$10.47
Available to order
Reference Price (USD)
1+
$10.47000
500+
$10.3653
1000+
$10.2606
1500+
$10.1559
2000+
$10.0512
2500+
$9.9465
Exquisite packaging
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Optimize power control with STGYA50M120DF3 Single IGBTs from STMicroelectronics, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. STMicroelectronics ensures STGYA50M120DF3 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 2mJ (on), 3.2mJ (off)
- Input Type: Standard
- Gate Charge: 194 nC
- Td (on/off) @ 25°C: 38ns/258ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 325 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: MAX247™
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