STGYA75H120DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 1200 V, 7
$12.24
Available to order
Reference Price (USD)
1+
$12.24000
500+
$12.1176
1000+
$11.9952
1500+
$11.8728
2000+
$11.7504
2500+
$11.628
Exquisite packaging
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Enhance your electronic designs with STGYA75H120DF2 Single IGBTs from STMicroelectronics, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. STMicroelectronics's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
- Power - Max: 750 W
- Switching Energy: 4.3mJ (on), 3.9mJ (off)
- Input Type: Standard
- Gate Charge: 313 nC
- Td (on/off) @ 25°C: 61ns/366ns
- Test Condition: 600V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 356 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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