STI33N60M6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 25A I2PAK
$3.19
Available to order
Reference Price (USD)
1+
$3.19112
500+
$3.1592088
1000+
$3.1272976
1500+
$3.0953864
2000+
$3.0634752
2500+
$3.031564
Exquisite packaging
Discount
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STI33N60M6 by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, STI33N60M6 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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