Shopping cart

Subtotal: $0.00

STP11N52K3

STMicroelectronics
STP11N52K3 Preview
STMicroelectronics
MOSFET N-CH 525V 10A TO220
$2.78
Available to order
Reference Price (USD)
1+
$3.23000
50+
$2.59880
100+
$2.36780
500+
$1.91730
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 525 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 510mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

Related Products

Vishay Siliconix

SI3421DV-T1-GE3

Panjit International Inc.

PJQ2463A_R1_00001

Infineon Technologies

IPB120P04P404ATMA1

Infineon Technologies

IPP220N25NFDAKSA1

Fairchild Semiconductor

SFR9120TM

Vishay Siliconix

SUD23N06-31-GE3

Vishay Siliconix

SI2333CDS-T1-BE3

Top