SI2333CDS-T1-BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 12-V (D-S) MOSFET
$0.65
Available to order
Reference Price (USD)
1+
$0.65000
500+
$0.6435
1000+
$0.637
1500+
$0.6305
2000+
$0.624
2500+
$0.6175
Exquisite packaging
Discount
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Optimize your electronic systems with SI2333CDS-T1-BE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SI2333CDS-T1-BE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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