STP12N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 8.5A TO220AB
$3.06
Available to order
Reference Price (USD)
1+
$4.04000
50+
$3.24960
100+
$2.96080
500+
$2.39754
1,000+
$2.02202
2,500+
$1.92092
5,000+
$1.84870
Exquisite packaging
Discount
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STMicroelectronics presents STP12N65M5, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STP12N65M5 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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