STP23NM50N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 500V 17A TO220-3
$5.50
Available to order
Reference Price (USD)
1,000+
$2.40240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STP23NM50N by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, STP23NM50N ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
IXYS
IXTH140P10T
Nexperia USA Inc.
BUK7227-100B,118
Fairchild Semiconductor
HUF75345P3_NL
Nexperia USA Inc.
2N7002P,235
onsemi
NTMFS5C430NLT1G
Rohm Semiconductor
SCT4036KEHRC11
Rohm Semiconductor
RQ3E110AJTB
Infineon Technologies
IPA50R350CPXKSA1
Infineon Technologies
IPB080N03LGATMA1
Alpha & Omega Semiconductor Inc.