STP35N60M2-EP
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V TO220
$3.67
Available to order
Reference Price (USD)
1,000+
$2.54100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover STP35N60M2-EP, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Micro Commercial Co
MCQ15N10YA-TP
onsemi
FCP190N65S3
Infineon Technologies
IPW50R399CPFKSA1
Rohm Semiconductor
RQ5A040ZPTL
onsemi
FCPF150N65F
Diodes Incorporated
DMN3731U-13
Nexperia USA Inc.
BUK9M10-30EX
Infineon Technologies
SPP02N60C3XKSA1
Vishay Siliconix
SIHB11N80E-GE3
IXYS