STP3N80K5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220
$1.65
Available to order
Reference Price (USD)
1+
$2.23000
50+
$1.82280
100+
$1.65230
500+
$1.31130
1,000+
$1.10670
2,500+
$1.03850
5,000+
$1.00440
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STP3N80K5, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STP3N80K5 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPD60R380E6ATMA2
Toshiba Semiconductor and Storage
SSM3J353F,LF
Nexperia USA Inc.
PSMN3R3-40MSHX
Vishay Siliconix
SI7157DP-T1-GE3
Vishay Siliconix
SISS40DN-T1-GE3
Infineon Technologies
IRL6342TRPBF
Nexperia USA Inc.
BUK98180-100A/CUX
Vishay Siliconix
SI7114DN-T1-GE3
Infineon Technologies
IPN60R2K0PFD7SATMA1
Nexperia USA Inc.