STP80N6F6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 60V 110A TO220
$2.57
Available to order
Reference Price (USD)
1+
$1.90000
50+
$1.53700
100+
$1.35600
500+
$1.07160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with STP80N6F6 by STMicroelectronics, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, STP80N6F6 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
DMN4800LSSL-13
Alpha & Omega Semiconductor Inc.
AOT11N70
onsemi
FDB8860
Alpha & Omega Semiconductor Inc.
AO4482
Vishay Siliconix
IRFR120PBF
Infineon Technologies
BSZ010NE2LS5ATMA1
IXYS
IXTH75N10L2
Infineon Technologies
BSR802NL6327HTSA1
IXYS
IXTP36P15P
Nexperia USA Inc.