BSR802NL6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 3.7A SC59
$0.72
Available to order
Reference Price (USD)
3,000+
$0.17647
6,000+
$0.16508
15,000+
$0.15370
30,000+
$0.14573
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BSR802NL6327HTSA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SC59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
IXYS
IXTP36P15P
Nexperia USA Inc.
PSMN011-60MLX
Fairchild Semiconductor
IRFR430BTM
Texas Instruments
CSD16570Q5BT
Vishay Siliconix
SQJ461EP-T2_GE3
Microchip Technology
APT50M75JLLU2
Renesas Electronics America Inc
NP23N06YDG-E1-AY
Infineon Technologies
IPP062NE7N3GXKSA1
Infineon Technologies
IRFU3707ZPBF
Infineon Technologies