STW12N120K5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 1200V 12A TO247
$11.16
Available to order
Reference Price (USD)
1+
$9.41000
30+
$7.82400
120+
$7.12000
510+
$6.06400
1,020+
$5.36000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with STW12N120K5, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust STW12N120K5 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Infineon Technologies
BSP297H6327XTSA1
STMicroelectronics
STP11N52K3
IXYS
IXFH46N65X3
Vishay Siliconix
SI3421DV-T1-GE3
Panjit International Inc.
PJQ2463A_R1_00001
Infineon Technologies
IPB120P04P404ATMA1
onsemi
FDFME3N311ZT
Infineon Technologies
IPP220N25NFDAKSA1
IXYS
IXFA72N30X3
Fairchild Semiconductor