STW27N60M2-EP
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 20A TO247-3
$5.68
Available to order
Reference Price (USD)
1+
$6.01000
30+
$4.82633
120+
$4.39725
510+
$3.56071
1,020+
$3.00300
2,520+
$2.85285
Exquisite packaging
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Discover STW27N60M2-EP, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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