SUD19P06-60L-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 19A TO252
$1.38
Available to order
Reference Price (USD)
2,000+
$0.58520
6,000+
$0.55594
10,000+
$0.53504
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SUD19P06-60L-E3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SUD19P06-60L-E3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Renesas Electronics America Inc
2SJ542-E
Fairchild Semiconductor
FQA14N30
IXYS
IXFN140N25T
Microchip Technology
APT50M85JVFR
onsemi
NTD6N40T4
STMicroelectronics
STP5N95K5
Vishay Siliconix
SIHG35N60EF-GE3
Diodes Incorporated
DMN2028UFDF-13
Rohm Semiconductor
RW1C025ZPT2CR
Taiwan Semiconductor Corporation