TK1R4F04PB,LXGQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 160A TO220SM
$2.86
Available to order
Reference Price (USD)
1+
$2.86000
500+
$2.8314
1000+
$2.8028
1500+
$2.7742
2000+
$2.7456
2500+
$2.717
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage presents TK1R4F04PB,LXGQ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TK1R4F04PB,LXGQ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 205W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM(W)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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