TK35A08N1,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 80V 35A TO220SIS
$1.10
Available to order
Reference Price (USD)
1+
$1.06000
50+
$0.84560
100+
$0.73990
500+
$0.57380
1,000+
$0.45300
2,500+
$0.42280
Exquisite packaging
Discount
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Optimize your electronic systems with TK35A08N1,S4X, a high-quality Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TK35A08N1,S4X provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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