TK6R9P08QM,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 DPAK 80V 6.9MOHM
$1.09
Available to order
Reference Price (USD)
1+
$1.09000
500+
$1.0791
1000+
$1.0682
1500+
$1.0573
2000+
$1.0464
2500+
$1.0355
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents TK6R9P08QM,RQ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TK6R9P08QM,RQ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIHA24N80AE-GE3
Infineon Technologies
IPAN70R450P7SXKSA1
STMicroelectronics
STB10N60M2
Fairchild Semiconductor
HUF76132S3S
onsemi
NTGD4169FT1G
Infineon Technologies
IPD060N03LGBTMA1
onsemi
NTB8N50
Infineon Technologies
IPD530N15N3GATMA1
Fairchild Semiconductor
FDS7766S
IXYS