TK7R4A10PL,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
TK7R4A10PL,S4X by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TK7R4A10PL,S4X ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
NTLJS4D9N03HTAG
IXYS
IXFH50N60X
onsemi
FQT7N10LTF
Renesas Electronics America Inc
NP35N04YUG-E1-AY
STMicroelectronics
STW28NM60ND
Vishay Siliconix
SQJQ160E-T1_GE3
Goford Semiconductor
G110N06T
Taiwan Semiconductor Corporation
TSM180N03CS RLG
Vishay Siliconix
SIHB068N60EF-GE3
Yangzhou Yangjie Electronic Technology Co.,Ltd