TK7S10N1Z,LXHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 7A DPAK
$0.94
Available to order
Reference Price (USD)
1+
$0.94000
500+
$0.9306
1000+
$0.9212
1500+
$0.9118
2000+
$0.9024
2500+
$0.893
Exquisite packaging
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TK7S10N1Z,LXHQ by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TK7S10N1Z,LXHQ ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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