TK8P60W,RVQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 600V 8A DPAK
$1.09
Available to order
Reference Price (USD)
2,000+
$1.01920
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of TK8P60W,RVQ, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TK8P60W,RVQ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Nexperia USA Inc.
BUK9M23-80EX
onsemi
NTB150N65S3HF
onsemi
NVTYS029N08HTWG
onsemi
FCH165N65S3R0-F155
Vishay Siliconix
SQJ416EP-T1_GE3
IXYS
IXTX40P50P
STMicroelectronics
STB35N60DM2
Infineon Technologies
IRLU024NPBF
Fairchild Semiconductor
FDD6670A_NL
Infineon Technologies