TN0106N3-G-P003

Specifications

• Product Status: Active
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Vgs (Max): ±20V
• Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)