TP2535N3-G
Microchip Technology
Microchip Technology
MOSFET P-CH 350V 86MA TO92-3
$1.89
Available to order
Reference Price (USD)
1+
$1.31000
25+
$1.09200
100+
$0.98880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with TP2535N3-G, a high-quality Transistors - FETs, MOSFETs - Single from Microchip Technology. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TP2535N3-G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350 V
- Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Vishay Siliconix
SIR416DP-T1-GE3
IXYS
IXTN660N04T4
Toshiba Semiconductor and Storage
TK6A55DA(STA4,Q,M)
Infineon Technologies
IPB60R080P7ATMA1
IXYS
IXTP34N65X2
Renesas Electronics America Inc
RJK6026DPP-00#T2
onsemi
FDPF8N50NZ
Vishay Siliconix
SIS892DN-T1-GE3
Infineon Technologies
IRL3803VSPBF
Toshiba Semiconductor and Storage