TPH1R104PB,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 120A 8SOP
$2.19
Available to order
Reference Price (USD)
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$2.19000
500+
$2.1681
1000+
$2.1462
1500+
$2.1243
2000+
$2.1024
2500+
$2.0805
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TPH1R104PB,L1XHQ by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TPH1R104PB,L1XHQ inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 132W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-SOIC (0.197", 5.00mm Width)
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