TPH2010FNH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 5.6A 8SOP
$1.54
Available to order
Reference Price (USD)
5,000+
$0.59500
Exquisite packaging
Discount
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Enhance your circuit performance with TPH2010FNH,L1Q, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TPH2010FNH,L1Q for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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