TPH3205WSBQA
Transphorm
Transphorm
GANFET N-CH 650V 35A TO247-3
$22.97
Available to order
Reference Price (USD)
1+
$21.64000
10+
$20.01700
30+
$18.39400
120+
$17.09558
270+
$15.68900
510+
$15.14800
Exquisite packaging
Discount
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Boost your electronic applications with TPH3205WSBQA, a reliable Transistors - FETs, MOSFETs - Single by Transphorm. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TPH3205WSBQA meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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