TPH3207WS
Transphorm
Transphorm
GANFET N-CH 650V 50A TO247-3
$33.20
Available to order
Reference Price (USD)
1+
$34.40000
10+
$31.82000
25+
$29.24000
180+
$27.17600
360+
$24.94000
Exquisite packaging
Discount
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Discover TPH3207WS, a versatile Transistors - FETs, MOSFETs - Single solution from Transphorm, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 8V
- Vgs(th) (Max) @ Id: 2.65V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 2197 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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