TPHR6503PL1,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=210W F=1MHZ
$2.09
Available to order
Reference Price (USD)
1+
$2.09000
500+
$2.0691
1000+
$2.0482
1500+
$2.0273
2000+
$2.0064
2500+
$1.9855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents TPHR6503PL1,LQ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TPHR6503PL1,LQ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 210W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
Related Products
Rohm Semiconductor
RSJ451N04FRATL
Vishay Siliconix
SI2301CDS-T1-E3
Infineon Technologies
IPD90N04S404ATMA1
Infineon Technologies
BSC009NE2LSATMA1
Infineon Technologies
IPN95R3K7P7ATMA1
Infineon Technologies
IPP65R099CFD7AAKSA1
Infineon Technologies
IRFH5015TRPBF
Fairchild Semiconductor
FDS3170N7
Rectron USA
RM2303
IXYS