TPS1100DR
Texas Instruments
Texas Instruments
MOSFET P-CH 15V 1.6A 8SOIC
$0.75
Available to order
Reference Price (USD)
2,500+
$0.64680
Exquisite packaging
Discount
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Texas Instruments presents TPS1100DR, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TPS1100DR delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 15 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V
- Vgs (Max): +2V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 791mW (Ta)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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