TQM033NB04CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 21A/121A PDFN56U
$4.97
Available to order
Reference Price (USD)
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$4.97000
500+
$4.9203
1000+
$4.8706
1500+
$4.8209
2000+
$4.7712
2500+
$4.7215
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TQM033NB04CR RLG by Taiwan Semiconductor Corporation. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TQM033NB04CR RLG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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