TRS20N65FB,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SIC SBD TO-247 V=650 IF=12A
$6.81
Available to order
Reference Price (USD)
1+
$6.81000
500+
$6.7419
1000+
$6.6738
1500+
$6.6057
2000+
$6.5376
2500+
$6.4695
Exquisite packaging
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Discover high-quality TRS20N65FB,S1Q from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Our products are engineered for reliability and efficiency, making them ideal for various industrial and commercial uses. The TRS20N65FB,S1Q features excellent performance in rectification and array configurations, ensuring stable and consistent operation. Whether you need components for power supplies, converters, or other electronic devices, Toshiba Semiconductor and Storage's diodes are the perfect choice. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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