TSM025NH04CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 100A, SINGLE N-CHANNEL POWE
$5.29
Available to order
Reference Price (USD)
1+
$5.29000
500+
$5.2371
1000+
$5.1842
1500+
$5.1313
2000+
$5.0784
2500+
$5.0255
Exquisite packaging
Discount
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Upgrade your electronic designs with TSM025NH04CR RLG by Taiwan Semiconductor Corporation, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, TSM025NH04CR RLG ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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