RJK6014DPP-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$5.12
Available to order
Reference Price (USD)
1+
$5.12000
500+
$5.0688
1000+
$5.0176
1500+
$4.9664
2000+
$4.9152
2500+
$4.864
Exquisite packaging
Discount
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Experience the power of RJK6014DPP-E0#T2, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RJK6014DPP-E0#T2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 575mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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