TSM025NH04LCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 100A, SINGLE N-CHANNEL POWE
$5.29
Available to order
Reference Price (USD)
1+
$5.29000
500+
$5.2371
1000+
$5.1842
1500+
$5.1313
2000+
$5.0784
2500+
$5.0255
Exquisite packaging
Discount
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Experience the power of TSM025NH04LCR RLG, a premium Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TSM025NH04LCR RLG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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