TSM056NH04LCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 54A, SINGLE N-CHANNEL POWER
$3.16
Available to order
Reference Price (USD)
1+
$3.16000
500+
$3.1284
1000+
$3.0968
1500+
$3.0652
2000+
$3.0336
2500+
$3.002
Exquisite packaging
Discount
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Enhance your circuit performance with TSM056NH04LCR RLG, a premium Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TSM056NH04LCR RLG for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 78.9W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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