TSM110NB04DCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 40V,
$2.72
Available to order
Reference Price (USD)
1+
$2.72000
500+
$2.6928
1000+
$2.6656
1500+
$2.6384
2000+
$2.6112
2500+
$2.584
Exquisite packaging
Discount
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Enhance your electronic applications with Taiwan Semiconductor Corporation s TSM110NB04DCR RLG, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of TSM110NB04DCR RLG today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
- Power - Max: 2W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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