TSM110NB04LDCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 40V,
$1.26
Available to order
Reference Price (USD)
1+
$1.25880
500+
$1.246212
1000+
$1.233624
1500+
$1.221036
2000+
$1.208448
2500+
$1.19586
Exquisite packaging
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Boost your project s performance with Taiwan Semiconductor Corporation s TSM110NB04LDCR RLG, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, TSM110NB04LDCR RLG provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of TSM110NB04LDCR RLG.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
- Power - Max: 2W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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