ZXMN2A04DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 5.9A 8-SOIC
$2.11
Available to order
Reference Price (USD)
1+
$2.11000
500+
$2.0889
1000+
$2.0678
1500+
$2.0467
2000+
$2.0256
2500+
$2.0045
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Diodes Incorporated s ZXMN2A04DN8TA, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for ZXMN2A04DN8TA.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.9A
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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