TSM250NB06LDCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 60V,
$1.26
Available to order
Reference Price (USD)
1+
$1.25880
500+
$1.246212
1000+
$1.233624
1500+
$1.221036
2000+
$1.208448
2500+
$1.19586
Exquisite packaging
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Upgrade your electronic designs with Taiwan Semiconductor Corporation s TSM250NB06LDCR RLG, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how TSM250NB06LDCR RLG can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
- Power - Max: 2W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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