TSM300NB06DCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 60V,
$2.34
Available to order
Reference Price (USD)
1+
$2.34000
500+
$2.3166
1000+
$2.2932
1500+
$2.2698
2000+
$2.2464
2500+
$2.223
Exquisite packaging
Discount
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The TSM300NB06DCR RLG from Taiwan Semiconductor Corporation is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, TSM300NB06DCR RLG offers the reliability you need. Contact us now to discuss how we can support your project requirements with Taiwan Semiconductor Corporation s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V
- Power - Max: 2W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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