TSM70N600CI C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 700V 8A ITO220AB
$3.24
Available to order
Reference Price (USD)
1+
$2.04000
10+
$1.84000
100+
$1.47890
500+
$1.15028
1,000+
$0.95309
3,000+
$0.92022
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
TSM70N600CI C0G by Taiwan Semiconductor Corporation is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TSM70N600CI C0G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
Fairchild Semiconductor
HUF75545S3S
Diodes Incorporated
DMP58D0LFB-7
Nexperia USA Inc.
PSMN3R7-100BSEJ
Fairchild Semiconductor
FQP2NA90
onsemi
FDMS007N08LC
Vishay Siliconix
IRFR120TRLPBF
Rohm Semiconductor
RQ6E050AJTCR
onsemi
NVBLS001N06C
Renesas Electronics America Inc
2SK3113-ZK-E2-AZ
Infineon Technologies