TSM7ND65CI
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 650V 7A ITO220
$1.55
Available to order
Reference Price (USD)
1+
$1.50000
50+
$1.19820
100+
$1.04840
500+
$0.81302
1,000+
$0.64185
2,500+
$0.59906
Exquisite packaging
Discount
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Upgrade your electronic designs with TSM7ND65CI by Taiwan Semiconductor Corporation, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, TSM7ND65CI ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1124 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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