ZXMN10B08E6TA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 1.6A SOT26
$0.83
Available to order
Reference Price (USD)
3,000+
$0.34285
6,000+
$0.32184
15,000+
$0.31133
30,000+
$0.30560
Exquisite packaging
Discount
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Optimize your electronic systems with ZXMN10B08E6TA, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, ZXMN10B08E6TA provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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