UF3C065030K4S
UnitedSiC
UnitedSiC
MOSFET N-CH 650V 85A TO247-4
$20.72
Available to order
Reference Price (USD)
1+
$20.72000
500+
$20.5128
1000+
$20.3056
1500+
$20.0984
2000+
$19.8912
2500+
$19.684
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
UnitedSiC presents UF3C065030K4S, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, UF3C065030K4S delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 441W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
Related Products
Panjit International Inc.
PJA3416A_R1_00001
Vishay Siliconix
SQD50P08-25L_GE3
onsemi
FCHD125N65S3R0-F155
Infineon Technologies
IPA032N06N3GXKSA1
onsemi
NVMTSC1D3N08M7TXG
Harris Corporation
IRFPC40
Microchip Technology
APT17F100S
Vishay Siliconix
SIHH250N60EF-T1GE3
Infineon Technologies
IPD050N10N5ATMA1
Diodes Incorporated