UF3C065080T3S
UnitedSiC
UnitedSiC
MOSFET N-CH 650V 31A TO220-3
$8.14
Available to order
Reference Price (USD)
1+
$8.14000
500+
$8.0586
1000+
$7.9772
1500+
$7.8958
2000+
$7.8144
2500+
$7.733
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
UnitedSiC presents UF3C065080T3S, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, UF3C065080T3S delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Alpha & Omega Semiconductor Inc.
AOWF12N60
Vishay Siliconix
SI2377EDS-T1-BE3
Vishay Siliconix
SIS782DN-T1-GE3
Infineon Technologies
IPB65R110CFDATMA1
Texas Instruments
CSD19503KCS
onsemi
NTMFS4C250NT1G
onsemi
NTDV20N06T4G-VF01
Infineon Technologies
BSC011N03LSTATMA1
Infineon Technologies
IPD90N04S403ATMA1
Fairchild Semiconductor